|
Selected(0)Clear
Items/Page: Sort: |
| The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
 Adobe PDF(1957Kb) |  Favorite | View/Download：40/0 | Submit date：2020/07/31 |
| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文
Applied Physics B, 2019, 卷号: 125, 页码: 235
Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
Adobe PDF(1223Kb) | Favorite | View/Download：31/0 | Submit date：2020/07/31 |
| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文
Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813
Authors: J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
Adobe PDF(1171Kb) | Favorite | View/Download：37/0 | Submit date：2020/07/31 |
| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
Adobe PDF(1681Kb) | Favorite | View/Download：106/0 | Submit date：2019/11/19 |
| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
Adobe PDF(1424Kb) | Favorite | View/Download：106/0 | Submit date：2019/11/19 |
| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1110Kb) | Favorite | View/Download：105/0 | Submit date：2019/11/19 |
| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1754Kb) | Favorite | View/Download：105/1 | Submit date：2019/11/19 |
| Valley Zeeman splitting of monolayer MoS 2 probed by low-field magnetic circular dichroism spectroscopy at room temperature 期刊论文
Applied Physics Letters, 2018, 卷号: 112, 期号: 15, 页码: 153105
Authors: Y. J. Wu; C. Shen; Q. H. Tan; J. Shi; X. F. Liu; Z. H. Wu; J. Zhang; P. H. Tan; H. Z. Zheng
Adobe PDF(42Kb) | Favorite | View/Download：74/0 | Submit date：2019/11/18 |
| Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 060407
Authors: K. K. Meng; X. P. Zhao; P. F. Liu; Q. Liu; Y. Wu; Z. P. Li; J. K. Chen; J. Miao; X. G. Xu; J. H. Zhao; Y. Jiang
Adobe PDF(2698Kb) | Favorite | View/Download：93/0 | Submit date：2019/11/12 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
Adobe PDF(5388Kb) | Favorite | View/Download：581/3 | Submit date：2018/07/11 |
