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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体... [173]
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江德生 [185]
朱建军 [39]
赵德刚 [38]
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1725/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:
Zhu JH
;
Wang LJ
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1530Kb)
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View/Download:1611/524
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Submit date:2011/07/05
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:
Zhu JH
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Qiu YX
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)
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View/Download:1630/448
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Submit date:2011/07/05
Diodes
Efficiency
Light-splitting photovoltaic system utilizing two dual-junction solar cells
期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:
Xiong KL
;
Lu SL
;
Dong JR
;
Zhou TF
;
Jiang DS
;
Wang RX
;
Yang H
;
Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
Adobe PDF(681Kb)
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View/Download:1322/436
  |  
Submit date:2011/07/05
Light Splitting
Gainp/gaas
Gainasp/ingaas
Dual Junction
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector
期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:
Deng Y
;
Zhao DG
;
Wu LL
;
Liu ZS
;
Zhu JJ
;
Jiang DS
;
Zhang SM
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1257/230
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Submit date:2011/07/05
Gan
Ultraviolet And Infrared Photodetector
Quantum Efficiency
Solar-blind
高阻氮化镓外延层的异常光吸收
期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:
刘文宝
;
赵德刚
;
江德生
;
刘宗顺
;
朱建军
;
张书明
;
杨辉
Adobe PDF(685Kb)
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View/Download:905/161
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Submit date:2011/08/16
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang
;
H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(319Kb)
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View/Download:1241/307
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Submit date:2010/04/13
Nitride Materials
Photoconductivity And Photovoltaics
Computer Simulations
Films
器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响
期刊论文
物理学报, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:
邓懿
;
赵德刚
;
吴亮亮
;
刘宗顺
;
朱建军
;
江德生
;
张书明
;
梁骏吾
Adobe PDF(853Kb)
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View/Download:1407/317
  |  
Submit date:2011/08/16
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:
Wang LJ
;
Zhang SM
;
Zhu JH
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Jiang DS
;
Wang YT
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)
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View/Download:1429/361
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Submit date:2010/04/05
Gan
Light Emitting Diode
Surface Treatment
Leakage Current
Threading Dislocation Densities
Layers
Ni/au
Leds
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1770/452
  |  
Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd