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1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
Authors:  Niu Zhichuan;  Ni Haiqiao;  Fang Zhidan;  Gong Zheng;  Zhang Shiyong;  Wu Donghai;  Sun Zheng;  Zhao Huan;  Peng Hongling;  Han Qin;  Wu Ronghan
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Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
1.55μm低温生长GaAs谐振腔增强型探测器 期刊论文
光子学报, 2006, 卷号: 35, 期号: 4, 页码: 549-551
Authors:  韩勤;  彭红玲;  杜云;  倪海桥;  赵欢;  牛智川;  吴荣汉
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Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power 期刊论文
Chinese Optics Letters, 2006, 卷号: 4, 期号: 7, 页码: 413-415
Authors:  Qin Han;  Zhichuan Niu;  Haiqiao Ni;  Shiyong Zhang;  Xiaohong Yang;  Yun Du;  Cunzhu Tong;  Huan Zhao;  Yingqiang Xu;  Hongling Peng;  Ronghan Wu
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新奇半导体低维结构的自组织生长 期刊论文
物理, 2006, 卷号: 35, 期号: 8, 页码: 654-658
Authors:  牛智川;  黄社松;  龚政;  方志丹;  倪海桥;  孙宝权;  李树深;  夏建白
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