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2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文
Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345
Authors:  Shengwen Xie ;   Chengao Yang ;   ShuShan Huang ;   Ye Yuan ;   Yi Zhang ;   Jinming Shang ;   Chenyuan Cai ;   Yu Zhang ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu
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The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文
IEEE Access, 2019, 卷号: 7, 页码: 102710-102716
Authors:  Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
Authors:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
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High-power GaSb-based microstripe broad-area lasers 期刊论文
Applied physics express, 2018, 卷号: 11, 期号: 3, 页码: 32702
Authors:  Zefeng Lu ;   Lijie Wang ;   Yu Zhang ;   Shili Shu ;   Sicong Tian ;   Cunzhu Tong ;   Guanyu Hou ;   Xiaoli Chai ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu ;   Lijun Wang
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Anisotropic in-plane spin dynamics in (110)-oriented GaAs/AlGaAs multiple quantum well 期刊论文
Journal of Applied Physics, 2017, 卷号: 121, 期号: 15, 页码: 153901
Authors:  Xuan Qian;  Jian Ma;  HaiQiao Ni;  ZhiChuan Niu;  Yang Ji
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A deterministic quantum dot micropillar single photon source with >65% extraction efficiency based on fluorescence imaging method 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 13986
Authors:  Shunfa Liu;  Yuming Wei;  Rongling Su;  Rongbin Su;  Ben Ma;  Zesheng Chen;  Haiqiao Ni;  Zhichuan Niu;  Ying Yu;  Yujia Wei;  Xuehua Wang;  Siyuan Yu
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Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors 期刊论文
Nanoscale, 2017, 卷号: 9, 页码: 11833–11840
Authors:  Yunhao Zhao;  Lu Liu;  Renchao Che;  Han Bi;  Xi Han;  Xuebing Zhao;  Haiqiao Ni;  Yingqiang Xu;  Zhichuan Niu
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1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K 期刊论文
Appl. Phys. Lett., 2017, 卷号: 111, 页码: 182102
Authors:  Yongzhou Xue;  Zesheng Chen;  Haiqiao Ni;  Zhichuan Niu;  Desheng Jiang;  Xiuming Dou;  Baoquan Sun
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Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 7, 页码: 7246-7252
Authors:  Jiamin Rong;  Enbo Xing;  Yu Zhang;  Lijie Wang;  Shili Shu;  Sicong Tian;  Cunzhu Tong;  Xiaoli Chai;  Yingqiang Xu;  Haiqiao Ni;  Zhichuan Niu;  Lijun Wang
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InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文
Journal of Crystal Growth, 2016, 卷号: 443, 页码: 85-89
Authors:  Wei Xiang;  Guowei Wang;  Hongyue Hao;  Yongping Liao;  Xi Han;  Lichun Zhang;  Yingqiang Xu;  Zhengwei Ren;  Haiqiao Ni;  Zhenhong He;  Zhichuan Niu
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