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Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123104
Authors:  Wang, HY;  Dou, XM;  Yang, S;  Su, D;  Jiang, DS;  Ni, HQ;  Niu, ZC;  Sun, BQ
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Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 12, 页码: 123107
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Hao, HY;  Xu, YQ;  Niu, ZC
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Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 5, 页码: 53524
Authors:  Dou, XM;  Sun, BQ;  Jiang, DS;  Ni, HQ;  Niu, ZC
Adobe PDF(1057Kb)  |  Favorite  |  View/Download:666/231  |  Submit date:2013/03/17
Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103516
Authors:  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Xu ZY;  Dou XM CAS SKLSM Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: bqsun@semi.ac.cn
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Deformation  Excitons  Fine Structure  Iii-v Semiconductors  Indium Compounds  Phonons  Photoluminescence  Semiconductor Quantum Dots  Spin Dynamics  
Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 10, 页码: Art. No. 103716
Authors:  Chang XY;  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Chang, XY, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. E-mail Address: bqsun@semi.ac.cn
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Fine-structure  Trion  
Long-wavelength light emission from self-assembled heterojunction quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9, 页码: Art. No. 094315
Authors:  Zhou, ZQ;  Xu, YQ;  Hao, RT;  Tang, B;  Ren, ZW;  Niu, ZC;  Xu, YQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yingqxu@semi.ac.cn
Adobe PDF(374Kb)  |  Favorite  |  View/Download:1019/296  |  Submit date:2010/03/08
Mu-m  Gaas  Growth  Epitaxy  
Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 9, 页码: Art.No.093902
Authors:  Deng JJ;  Zhao JH;  Bi JF;  Niu ZC;  Yang FH;  Wu XG;  Zheng HZ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: jhzhao@red.semi.ac.cn
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Molecular-beam-epitaxy  Room-temperature Ferromagnetism  Spintronics  Multilayer  Films  Cras  
Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 3, 页码: Art.No.034903
Authors:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Wu DH;  Han Q;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn
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Improved Luminescence Efficiency  Optical-properties  Lasers  Nitrogen  Origin  
A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As 期刊论文
JOURNAL OF APPLIED PHYSICS, 2005, 卷号: 97, 期号: 6, 页码: Art.No.063908
Authors:  Jiang CP;  Zhao JH;  Deng JJ;  Yang FH;  Niu ZC;  Wu XG;  Zheng HZ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jhzhao@red.semi.ac.cn
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Curie-temperature  
Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 6, 页码: 3277-3281
Authors:  Dong, QR;  Li, SS;  Niu, ZC;  Feng, SL;  Zheng, HZ;  Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100089, Peoples R China. 电子邮箱地址: qrdong@red.semi.ac.cn
Adobe PDF(103Kb)  |  Favorite  |  View/Download:691/227  |  Submit date:2010/03/09
Dot Systems