SEMI OpenIR  > 半导体超晶格国家重点实验室
Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field
Dou, XM; Sun, BQ; Jiang, DS; Ni, HQ; Niu, ZC
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume111Issue:5Pages:53524
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23585
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Dou, XM,Sun, BQ,Jiang, DS,et al. Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field[J]. JOURNAL OF APPLIED PHYSICS,2012,111(5):53524.
APA Dou, XM,Sun, BQ,Jiang, DS,Ni, HQ,&Niu, ZC.(2012).Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field.JOURNAL OF APPLIED PHYSICS,111(5),53524.
MLA Dou, XM,et al."Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field".JOURNAL OF APPLIED PHYSICS 111.5(2012):53524.
Files in This Item:
File Name/Size DocType Version Access License
2012391.pdf(1057KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Dou, XM]'s Articles
[Sun, BQ]'s Articles
[Jiang, DS]'s Articles
Baidu academic
Similar articles in Baidu academic
[Dou, XM]'s Articles
[Sun, BQ]'s Articles
[Jiang, DS]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Dou, XM]'s Articles
[Sun, BQ]'s Articles
[Jiang, DS]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.