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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1, 页码: 013108
Authors:  Zhang, YH;  Wei, TB;  Xiong, Z;  Shang, L;  Tian, YD;  Zhao, Y;  Zhou, PY;  Wang, JX;  Li, JM
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在锗衬底上生长无反相畴砷化镓薄膜的分子束外延方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  王鹏飞;  吴东海;  吴兵朋;  熊永华;  詹 峰;  黄社松;  倪海桥;  牛智川
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Tuning photoluminescence of single InAs quantum dot by electric field 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 6, 页码: 4279-4282
Authors:  Chang XY (Chang Xiu-Ying);  Dou XM (Dou Xiu-Ming);  Sun BQ (Sun Bao-Quan);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Single Inas Quantum Dot  Stark Effect  Electron-hole Separation  
Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文
EPL, 2010, 卷号: 90, 期号: 3, 页码: Art. No. 37004
Authors:  Gong M (Gong Ming);  Chen G (Chen Geng);  He LX (He Lixin);  Li CF (Li Chuan-Feng);  Tang JS (Tang Jian-Shun);  Sun FW (Sun Fang-Wen);  Niu ZC (Niu Zhi-Chuan);  Huang SS (Huang She-Song);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Guo GC (Guo Guang-Can);  Gong, M, Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China. 电子邮箱地址: helx@ustc.edu.cn;  cfli@ustc.edu.cn
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Phonon Coupling Regime  
电场调谐InAs单量子点的发光光谱 期刊论文
物理学报, 2010, 卷号: 59, 期号: 6, 页码: 4279-4282
Authors:  常秀英;  窦秀明;  孙宝权;  熊永华;  倪海桥;  牛智川
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半导体InAs量子点单光子发射器件 期刊论文
物理, 2010, 卷号: 39, 期号: 11, 页码: 737-745
Authors:  牛智川;  孙宝权;  窦秀明;  熊永华;  王海莉;  倪海桥;  李树深;  夏建白
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Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103516
Authors:  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Xu ZY;  Dou XM CAS SKLSM Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: bqsun@semi.ac.cn
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Deformation  Excitons  Fine Structure  Iii-v Semiconductors  Indium Compounds  Phonons  Photoluminescence  Semiconductor Quantum Dots  Spin Dynamics  
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: Art. No. 067801
Authors:  Wang PF;  Xiong YH;  Wang HL;  Huang SS;  Ni HQ;  Xu YQ;  He ZH;  Niu ZC;  Wang PF Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 100083 Peoples R China. E-mail Address: pfwang@semi.ac.cn
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Mu-m  Laser  Islands  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 卷号: 9, 期号: 2, 页码: 1333-1336
Authors:  Wu BP;  Wu DH;  Xiong YH;  Huang SS;  Ni HQ;  Xu YQ;  Niu ZC;  Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Inas Quantum Dots  Metamorphic Buffer  Molecular Beam Epitaxy  
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 014214
Authors:  Wang HL;  Wu DH;  Wu BP;  Ni HQ;  Huang SS;  Xiong YH;  Wang PF;  Han Q;  Niu ZC;  Tangring I;  Wang SM;  Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com
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Threshold Current-density