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Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 194, 期号: 3-4, 页码: 426-429
Authors:  Liu JP;  Kong MY;  Huang DD;  Li JP;  Sun DZ;  Liu JP,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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X-ray Diffraction  Sige/si  Disilane Cracking  Photoluminescence  Dynamic Simulation  Silicon  Disordered Superlattices  Layers  Si2h6  
High-concentration hydrogen in unintentionally doped GaN 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
Authors:  Zhang JP;  Wang XL;  Sun DZ;  Li XB;  Kong MY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
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Gallium Nitride  Gas Source Molecular Beam Epitaxy  Hydrogen  Autodoping  Films  
New method for the growth of highly uniform quantum dots 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
Authors:  Pan D;  Zeng YP;  Kong MY;  Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
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Self-formed Quantum Dot  Stranski-krastanow Growth Mode  Superlattice  Molecular-beam Epitaxy  Ingaas  Gaas  Dislocations  Multilayers  Defects  Strain  
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Authors:  Liu JP;  Kong MY;  Li JP;  Liu XF;  Huang DD;  Sun DZ;  Liu JP,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: liujp@red.semi.ac.cn
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Si1-xgex Alloys  Low Temperature Epitaxy  Desorption  Adsorption  Surface Morphology  Hydrogen Desorption  Growth Kinetics  Si(100)  Gas-source Mbe  Si  Surfactant  Germanium  Mechanism  Kinetics  Alloys  Si2h6  
New method for the growth of highly uniform quantum dots 期刊论文
MICROELECTRONIC ENGINEERING, 1998, 卷号: 43-44, 期号: 0, 页码: 79-83
Authors:  Pan D;  Zeng YP;  Kong MY;  Pan D,Chinese Acad Sci,Inst Semicond,Mat Ctr,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
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Self-formed Quantum Dot  Stranski-krastanow Growth Mode  Ingaas  Superlattice  Gaas  Molecular-beam Epitaxy  Dislocations  Multilayers  Defects  Strain  
The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 192, 期号: 1-2, 页码: 93-96
Authors:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Fu RH;  Kong MY;  Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Gan  2deg  Md Heterostructure  Mbe  Gan  Photoluminescence  Luminescence  Gallium Nitride  Plasma  
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Authors:  Wang HM;  Zeng YP;  Zhou HW;  Kong MY;  Wang HM,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Hall Elements  Gaas  Misorientation  Distortion  Layers  Mbe  Si  Heterostructures  Growth  
The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 192, 期号: 3-4, 页码: 471-474
Authors:  Zhang JP;  Sun DZ;  Wang XL;  Li XB;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Gan  Mbe  Growth  Buried Alxga1-xn Isolating Layers  Buffer Layer  
Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 83, 期号: 12, 页码: 7900-7902
Authors:  Li XB;  Sun DZ;  Dong JR;  Li JP;  Kong MY;  Yoon SF;  Li XB,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Heterostructures  Superlattices  
Growth and transport properties of InAs thin films on GaAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 191, 期号: 3, 页码: 361-364
Authors:  Zhou HW;  Zeng YP;  Wang HM;  Dong JR;  Zhu ZP;  Pan L;  Kong MY;  Zhou HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Epilayers  Mbe