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Optimization for MEMS filter to reduce feed-through and an analysis method based on polar diagram 期刊论文
Advanced Materials Research, 2013, 卷号: 677, 页码: 74-78
Authors:  Han, Guowei;  Si, Chaowei;  Ning, Jing;  Zhao, Yongmei;  Sun, Guosheng;  Yang, Fuhua
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Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 4, 页码: 045006
Authors:  Han, Guowei;  Si, Chaowei;  Ning, Jin;  Zhong, Weiwei;  Sun, Guosheng;  Zhao, Yongmei;  Yang, Fuhua
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Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文
Materials Science Forum, 2012, 卷号: 717-720, 页码: 105-108
Authors:  Zhao, Wanshun;  Sun, Guosheng;  Wu, Hailei;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Wang, Lei;  Liu, Xingfang;  Yang, Lijun
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Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文
Journal of Physics D: Applied Physics, 2012, 卷号: 45, 期号: 24, 页码: 245102
Authors:  Dong, Lin;  Sun, Guosheng;  Zheng, Liu;  Liu, Xingfang;  Zhang, Feng;  Yan, Guoguo;  Zhao, Wanshun;  Wang, Lei;  Li, Xiguang;  Wang, Zhanguo
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High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文
IEEE Electron Device Letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Zeng, Yiping;  Zhang, F.(fzhang@semi.ac.cn)
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Integrated Circuits  Metal Insulator Boundaries  Photodetectors  Semiconducting Silicon Compounds  Semiconductor Insulator Boundaries  Silicon Carbide  
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Authors:  Yan, Guoguo;  Sun, Guosheng;  Wu, Hailei;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Yan, G.(ggyan@semi.ac.cn)
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Chemical Vapor Deposition  Deposition  Electric Resistance  Epitaxial Growth  Film Growth  Sheet Resistance  Silicon Carbide  Silicon Wafers  
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Aluminum  Annealing  Ion implantatIon  Pressure Effects  Semiconducting Silicon Compounds  Silicon Carbide  Surface Roughness  
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
Adobe PDF(887Kb)  |  Favorite  |  View/Download:875/194  |  Submit date:2012/06/14
Epitaxial Growth  Ethylene  Growth Rate  Morphology  Surface Roughness