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High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films
Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping; Zhang, F.(fzhang@semi.ac.cn)
2011
Source PublicationIEEE Electron Device Letters
ISSN07413106
Volume32Issue:12Pages:1722-1724
Abstract4H-SiC-based metal-insulator-semiconductor(MIS) ultraviolet(UV) photodetectors with thermally grown SiO2 and evaporated Al2}O3SiO}2(A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of3.25\times10}-10 and9.75\times10-9}\ A/cm}2 and high UV-to-visible rejection ratios of2}\times10}3 have been achieved at10 V. The peak responsivities of these devices were separately30 mA/W at260 nm and50 mA/W at270 nm at10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.?2006 IEEE.
metadata_83中科院半导体材料科学重点实验室
KeywordIntegrated Circuits Metal Insulator Boundaries Photodetectors Semiconducting Silicon Compounds Semiconductor Insulator Boundaries Silicon Carbide
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23114
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, F.(fzhang@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films[J]. IEEE Electron Device Letters,2011,32(12):1722-1724.
APA Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zhang, F..(2011).High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films.IEEE Electron Device Letters,32(12),1722-1724.
MLA Zhang, Feng,et al."High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films".IEEE Electron Device Letters 32.12(2011):1722-1724.
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