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Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates 期刊论文
Applied Surface Science, 2013, 卷号: 270, 页码: 301-306
Authors:  Dong, Lin;  Sun, Guosheng;  Yu, Jun;  Zheng, Liu;  Liu, Xingfang;  Zhang, Feng;  Yan, Guoguo;  Li, Xiguang;  Wang, Zhanguo
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Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces 期刊论文
physica status solidi (a), 2013, 卷号: 210, 期号: 11, 页码: 2503–2509
Authors:  Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang
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Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates 期刊论文
APPLIED SURFACE SCIENCE, 2013, 卷号: 270, 页码: 301-306
Authors:  Dong, Lin;  Sun, Guosheng;  Yu, Jun;  Zheng, Liu;  Liu, Xingfang;  Zhang, Feng;  Yan, Guoguo;  Li, Xiguang;  Wang, Zhanguo
Adobe PDF(1164Kb)  |  Favorite  |  View/Download：1103/363  |  Submit date：2013/09/17
Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文
Journal of Physics D: Applied Physics, 2012, 卷号: 45, 期号: 24, 页码: 245102
Authors:  Dong, Lin;  Sun, Guosheng;  Zheng, Liu;  Liu, Xingfang;  Zhang, Feng;  Yan, Guoguo;  Zhao, Wanshun;  Wang, Lei;  Li, Xiguang;  Wang, Zhanguo
Adobe PDF(654Kb)  |  Favorite  |  View/Download：716/154  |  Submit date：2013/04/22