中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共13条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1600/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载：2265/749  |  提交时间：2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
THIN SOLID FILMS, Taipei, TAIWAN, NOV 12-14, 2004
作者:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. 电子邮箱地址: zcfeng@cc.ee.nut.edu.tw
Adobe PDF(152Kb)  |  收藏  |  浏览/下载：1619/489  |  提交时间：2010/03/29
Time-resolved Photoluminescence  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
作者:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
Adobe PDF(118Kb)  |  收藏  |  浏览/下载：1607/293  |  提交时间：2010/03/29
Nitrogen  
Novel compact SOI-based reconfigurable optical add/drop multiplexer using microring resonators - art. no. 60190L 会议论文
Passive Components and Fiber-based Devices II丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Chen P;  Fang Q;  Wang CX;  Geng MM;  Li F;  Liu YL;  Chen, P, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(456Kb)  |  收藏  |  浏览/下载：1325/255  |  提交时间：2010/03/29
Roadm  
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:  Zhang S;  Liao X;  Xu Y;  Martins R;  Fortunato E;  Kong G;  Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)  |  收藏  |  浏览/下载：1328/340  |  提交时间：2010/11/15
Amorphous-silicon Films  Scattering  Absorption  Densities  Hydrogen  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1509/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Controllable growth of semiconductor nanometer structures 会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:  Wang ZG;  Wu J;  Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)  |  收藏  |  浏览/下载：1185/233  |  提交时间：2010/11/15
Inas Quantum Dots  Self-organization  Monolayer Coverage  Density  Gaas  Islands  Inp(001)  Epitaxy  
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells 会议论文
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, NEW ORLEANS, LA, MAY 19-24, 2002
作者:  Zhang SB;  Xu YY;  Hu ZH;  Wang YQ;  Zeng XB;  Diao HW;  Wang WJ;  Kong GL;  Liao XB;  Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1415/381  |  提交时间：2010/10/29
Silicon  Raman  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1354/283  |  提交时间：2010/10/29
Luminescence  Localization