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Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)  |  收藏  |  浏览/下载：1480/265  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:  Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ;  Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)  |  收藏  |  浏览/下载：1036/178  |  提交时间：2010/11/15
Bi2ti2o7  Thin Film  Mocvd  (111) Orientation  Chemical-vapor-deposition  Crystal Thin-films  
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001
作者:  Sun GS;  Luo MC;  Wang L;  Zhu SR;  Li JM;  Zeng YP;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(751Kb)  |  收藏  |  浏览/下载：1502/300  |  提交时间：2010/11/15
3c-sic  In-situ Doping  Low-pressure Cvd  Sapphire Substrate  Chemical-vapor-deposition  Competition Epitaxy  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载：1334/242  |  提交时间：2010/11/15
Molecular-beam Epitaxy