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Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiang Li;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Heng Long;  Mo Li
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半导体低维结构的偏振光谱研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  李远
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自旋轨道耦合  平面光学各向异性  偏振光电流  磁致光电流  反射差分光谱。  
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 113, 页码: 144-147
Authors:  Yang, Xiaoguang;  Wang, Kefan;  Gu, Yongxian;  Ni, Haiqiao;  Wang, Xiaodong;  Yang, Tao;  Wang, Zhanguo
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Optical Pr operties of GaNAs and GaAsSb Semiconductors 期刊论文
中国科学院研究生院学报, 2005, 卷号: 22, 期号: 5, 页码: 645-655
Authors:  Luo Xiangdong;  Xu Zhongying
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Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
Authors:  Zhang W;  Xu YQ;  Niu ZC;  Wu RH;  Zhang W,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Gainnas  Luminescence  Diodes  Alloys  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold