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| Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文 Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282 Authors: Gaoqiang Deng; Yuantao Zhang; Pengchong Li ; Ye Yu ; Xu Han ; Liang Chen ; Long Yan ; Xin Dong ; Degang Zhao; Guotong Du
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| Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080 Authors: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang
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| Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact 期刊论文 Coatings, 2019, 卷号: 9, 页码: 291 Authors: Wenjie Wang ; Wuze Xie ; Zejia Deng ; Haojun Yang ; Mingle Liao ; Junze Li ; Xiaojia Luo ; Song Sun ; Degang Zhao
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| Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文 Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153 Authors: Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang
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| Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文 Materials Research Express, 2019, 卷号: 6, 页码: 076203 Authors: Wei Liu ; Feng Liang ; Degang Zhao ; Jing Yang ; Desheng Jiang ; Jianjun Zhu ; Zongshun Liu
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| Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文 Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280 Authors: Shuangtao Liu; Jing Yang; Degang Zhao; Desheng Jiang; Jianjun Zhu; Feng Liang; Ping Chen; Zongshun Liu; Yao Xing; Liyuan Peng
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| Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文 Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951 Authors: FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG
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| Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文 NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88 Authors: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang
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| Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 790, 页码: 197-202 Authors: Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang
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| Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文 Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8 Authors: Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Long Yan ; Pengchong Li ; Xu Han ; Liang Chen ; Degang Zhao ; Guotong Du
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