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Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文
SOLID STATE COMMUNICATIONS, 2004, 卷号: 132, 期号: 10, 页码: 707-711
Authors:  Bian LF;  Jiang DS;  Tan PH;  Lu SL;  Sun BQ;  Li LH;  Harmand, JC;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
Adobe PDF(675Kb)  |  Favorite  |  View/Download:918/312  |  Submit date:2010/03/09
Gaassbn Epilayer  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(176Kb)  |  Favorite  |  View/Download:927/268  |  Submit date:2010/08/12
Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold