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Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties 期刊论文
Nanoscale, 2018, 卷号: 10, 期号: 8, 页码: 8787-8795
Authors:  Wei Gao;  Yongtao Li;  Jianhua Guo;  Muxun Ni;  Ming Liao;  Haojie Mo;  Jingbo Li
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Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 页码: 7468–7472
Authors:  Xiantong Zheng ;   Wei Huang ;   Hongwei Liang ;   Ping Wang ;   Yu Liu ;   Zhaoying Chen ;   Ping Liang ;   Mo Li ;   Jian Zhang ;   Yonghai Chen ;   Xinqiang Wang
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Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Hui Yang;  Heng Long;  Mo Li
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Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shaungtao Liu;  Yao Xing;  Liqun Zhang;  Mo Li;  Jian Zhang
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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
Authors:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang;  Tobias Schulz;  Martin Albrecht;  Sebastian Metzner;  Mathias Müller;  Olga August;  Frank Bertram;  Jürgen Christen;  Peng Jin;  Mo Li;  Jian Zhang;  Xuelin Yang;  Fujun Xu;  Zhixin Qin;  Weikun Ge;  Bo Shen;  Xinqiang Wang
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Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiang Li;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Heng Long;  Mo Li
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Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
Authors:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiang Li;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Mo Li;  Jian Zhang
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Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
Authors:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang;  Ping Chen;  Jian Jun Zhu;  Zong Shun Liu;  Jing Yang;  Wei Liu;  Shuang Tao Liu;  Li Qun Zhang;  Mo Li
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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
Authors:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Xiang Li;  Feng Liang;  Wei Liu;  Shuangtao Liu;  Liqun Zhang;  Hui Yang;  Jian Zhang;  Mo Li
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New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文
Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Xiang Li;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Heng Long;  Mo Li
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