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Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1328/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1509/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1366/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1355/283  |  提交时间：2010/10/29
Luminescence  Localization  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1392/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1277/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1185/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1448/239  |  提交时间：2010/11/15
Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors  
Asymmetric dark current in double barrier quantum well infrared photodetectors 会议论文
INFRARED SPACEBORNE REMOTE SENSING VI, 3437, SAN DIEGO, CA, JUL 22-24, 1998
作者:  Zhuang QD;  Li JM;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Ctr Semicond Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(311Kb)  |  收藏  |  浏览/下载：1230/381  |  提交时间：2010/10/29
Dark Current  Quantum Well  Infrared  Photodetector  Mu-m  Performance  Detectors  Array  
Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文
PHYSICA E, 2 (1-4), SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997
作者:  Wang YJ;  Nickel HA;  McCombe BD;  Peeters FM;  Shi JM;  Hai GQ;  Wu XG;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
Adobe PDF(116Kb)  |  收藏  |  浏览/下载：1388/186  |  提交时间：2010/11/15
Resonant Magnetopolaron Effects  Gaas/algaas Quantum Well Structures  Interface Phonons  Electron-optical-phonon Interaction  Polaron-cyclotron-resonance  Phonon Modes  Gaas  Heterostructures  Superlattices  Electrons