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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:1925/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)
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收藏
  |  
浏览/下载:1703/523
  |  
提交时间:2010/03/09
Hydrogen Sensor
Algan/gan Heterostructure
Schottky Diode
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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收藏
  |  
浏览/下载:1387/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)
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收藏
  |  
浏览/下载:1256/297
  |  
提交时间:2010/03/29
High Breakdown Voltage
Mobility Transistors
Heterostructures
Sapphire
Ganhemts
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
作者:
Li, JM
;
Chong, M
;
Duan, XF
;
Xu, JD
;
Gao, M
;
Wang, FL
;
Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(135Kb)
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收藏
  |  
浏览/下载:1571/370
  |  
提交时间:2010/03/29
Silicon
Solar Cells
V-shaped Structure
Improved diphasic nc-si/a-si : H I-layer materials using PECVD
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Hao, HY
;
Zhang, SB
;
Xu, YY
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
;
Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(129Kb)
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收藏
  |  
浏览/下载:1309/230
  |  
提交时间:2010/03/29
Open-circuit Voltage
Silicon Solar-cells
Amorphous-silicon
Absorption
Resonant tunneling of holes in GaMnAs-related double- barrier structures
会议论文
JOURNAL OF SUPERCONDUCTIVITY, 16 (2), WURZBURG, GERMANY, JUL, 2002
作者:
Wu HB
;
Chang K
;
Xia JB
;
Peeters FM
;
Wu HB Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(202Kb)
  |  
收藏
  |  
浏览/下载:1061/236
  |  
提交时间:2010/11/15
Zeeman Effect
Gamnas Layer
Double-barrier Structure
Approximation
Studies of 6H-SiC devices
会议论文
CURRENT APPLIED PHYSICS, 2 (5), SEOUL, SOUTH KOREA, DEC 05-09, 2001
作者:
Wang SR
;
Liu ZL
;
Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:897/0
  |  
提交时间:2010/11/15
Sic
Schottky
Pn Junction Diodes
Mos Capacitor
Junction Diodes
Ti Schottky barrier diodes on n-type 6H-SiC
会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:
Liu ZL
;
Wang SR
;
Yu F
;
Zhang YG
;
Zhao H
;
Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(214Kb)
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收藏
  |  
浏览/下载:1581/581
  |  
提交时间:2010/10/29
Semiconductor
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
;
Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)
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收藏
  |  
浏览/下载:1441/268
  |  
提交时间:2010/11/15
Characterization
Defects
X-ray Diffraction
Molecular Beam Epitaxy
Nitrides
Gaas