Ti Schottky barrier diodes on n-type 6H-SiC

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	Ti Schottky barrier diodes on n-type 6H-SiC
	Liu ZL; Wang SR; Yu F; Zhang YG; Zhao H; Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2001
会议名称	6th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS
页码	1183-1186
会议日期	OCT 22-25, 2001
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-6520-8
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.
关键词	Semiconductor
学科领域	半导体器件
主办者	Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13675
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu ZL,Wang SR,Yu F,et al. Ti Schottky barrier diodes on n-type 6H-SiC[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2001:1183-1186.

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