Studies of 6H-SiC devices

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Studies of 6H-SiC devices
	Wang SR; Liu ZL; Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	Korea-China Joint Symposium on Smiconductor Physics and Device Applications
会议录名称	CURRENT APPLIED PHYSICS, 2 (5)
页码	393-399
会议日期	DEC 05-09, 2001
会议地点	SEOUL, SOUTH KOREA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1567-1739
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.
关键词	Sic Schottky Pn Junction Diodes Mos Capacitor Junction Diodes
学科领域	半导体器件
主办者	会议主办方: DONGGUK UNIV
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14881
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang SR,Liu ZL,Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.. Studies of 6H-SiC devices[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2002:393-399.