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无权访问的条目 期刊论文
作者:  He J;  Li F;  Feng L;  Xiao H;  Liu YL;  He J Chinese Acad Sci Inst Semicond Optoelect Syst Lab A35,QingHua E Rd,POB 912 Beijing 100083 Peoples R China. E-mail Address: hejun07@semi.ac.cn
Adobe PDF(722Kb)  |  收藏  |  浏览/下载：1551/498  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Li F (Li Feng);  Li XQ (Li Xin-Qi);  Zhang WM (Zhang Wei-Min);  Gurvitz SA (Gurvitz S. A.);  Li, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: Shmuel.Gurvitz@weizmann.ac.il
Adobe PDF(255Kb)  |  收藏  |  浏览/下载：1058/257  |  提交时间：2010/03/08
An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags 会议论文
PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE: 713-716 2009, San Jose, CA, 2009
作者:  Feng P (Feng Peng);  Li YL (Li Yunlong);  Wu NJ (Wu Nanjian);  Feng, P, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn
Adobe PDF(853Kb)  |  收藏  |  浏览/下载：1534/360  |  提交时间：2010/04/13
无权访问的条目 期刊论文
作者:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
Adobe PDF(438Kb)  |  收藏  |  浏览/下载：1597/399  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Lu QY (Lu, Quan-Yong);  Zhang W (Zhang, Wei);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Li L (Li, Lu);  Liu FQ (Liu, Feng-Qi);  Wang ZG (Wang, Zhan-Guo);  Lu, QY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
Adobe PDF(848Kb)  |  收藏  |  浏览/下载：1188/354  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Liu FQ (Liu Feng-Qi);  Li L (Li Lu);  Wang LJ (Wang Lijun);  Liu JQ (Liu Junqi);  Zhang W (Zhang Wei);  Zhang QD (Zhang Quande);  Liu WF (Liu Wanfeng);  Lu QY (Lu Quanyong);  Wang ZG (Wang Zhanguo);  Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
Adobe PDF(679Kb)  |  收藏  |  浏览/下载：1209/431  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Li, CL;  Wang, XM;  Yang, FH;  Feng, SL;  Li, CL, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: chllce@semi.ac.cn
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：994/340  |  提交时间：2010/03/08
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1801/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1940/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  收藏  |  浏览/下载：1714/523  |  提交时间：2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode