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Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1093/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1016/0  |  提交时间：2010/10/29
Sapphire  
Bandpass filter by a stretch and double-exposure technique 会议论文
FIBER OPTIC COMPONENTS AND OPTICAL COMMUNICATIONS II, 3552, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Zhou KM;  An G;  Ge H;  Wang W;  Zhang L;  Bennion I;  Zhou KM Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(720Kb)  |  收藏  |  浏览/下载：1460/260  |  提交时间：2010/10/29
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1291/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1466/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1373/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  
无权访问的条目 期刊论文
作者:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK,Chinese Acad Sci,Inst Semicond,Natl Integrated Optoelect Lab,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：809/208  |  提交时间：2010/08/12
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang LM;  Yang YL;  Zhang HQ;  Zhang XY;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1294/250  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  Dvd  
InAs/GaAs量子点和量子阱的静压光谱研究 成果
1998
主要完成人:  李国华;  韩和相;  汪兆平;  刘振先;  郑宝真
收藏  |  浏览/下载：1387/0  |  提交时间：2010/04/13
Inas/gaas  
LPE法制备的高效GaAs太阳电池 成果
1998
主要完成人:  向贤碧;  汪乐;  王加宽;  常秀兰;  励翠云
收藏  |  浏览/下载：1410/0  |  提交时间：2010/04/13
太阳电池