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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications
会议论文
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, JAN 10-12, 2007
作者:
Yan, J (Yan, Jun)
;
Xu, QM (Xu, Qiming)
;
Zhang, XL (Zhang, Xuelian)
;
Hu, XQ (Hu, Xueqing)
;
Xu, H (Xu, Hua)
;
Shi, Y (Shi, Yin)
;
Dai, FF (Dai, Fa Foster)
;
Yan, J, Chinese Acad Sci, Inst Semicond, SemiRF Lab, ISCAS, Beijing 100083, Peoples R China.
Adobe PDF(82Kb)
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浏览/下载:1654/251
  |  
提交时间:2010/03/29
Personal Communication Terminal
Sige Rfic
Wlan 802.11a Transceiver
Silicon thin films prepared in the transition region and their use in solar cells
会议论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, Bangkok, THAILAND, JAN 27-FEB 01, 2004
作者:
Zhang S
;
Liao X
;
Raniero L
;
Fortunato E
;
Xu Y
;
Kong G
;
Aguas H
;
Ferreira I
;
Martins R
;
Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(222Kb)
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浏览/下载:1785/301
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提交时间:2010/03/29
Silicon
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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浏览/下载:1844/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Architecture research and hardware implementation on simplified neural computing system for face identification
会议论文
PROCEEDINGS OF THE INTERNATIONAL JOINT CONFERENCE ON NEURAL NETWORKS 2003, VOLS 1-4, PORTLAND, OR, JUL 20-24, 2003
作者:
Xu J
;
Li WJ
;
Qu YF
;
Qin H
;
Wang SJ
;
Xu J Chinese Acad Sci Inst Semicond Artificial Neural Networks Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(216Kb)
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浏览/下载:1447/441
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提交时间:2010/10/29
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
;
Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)
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  |  
浏览/下载:1135/178
  |  
提交时间:2010/11/15
Bi2ti2o7
Thin Film
Mocvd
(111) Orientation
Chemical-vapor-deposition
Crystal Thin-films
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
;
Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)
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  |  
浏览/下载:1751/385
  |  
提交时间:2010/11/15
X-ray Diffraction
Nitrides
Semiconducting Iii-v Materials
Phase
Films
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:
Xu SJ
;
Or CT
;
Li Q
;
Zheng LX
;
Xie MH
;
Tong SY
;
Yang H
;
Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(89Kb)
  |  
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  |  
浏览/下载:1331/331
  |  
提交时间:2010/11/15
Optical-transitions
Photoluminescence
MOCVD growth of cubic GaN: Materials and devices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:
Yang H
;
Zhang SM
;
Xu DP
;
Li SF
;
Zhao DG
;
Fu Y
;
Sun YP
;
Feng ZH
;
Zheng LX
;
Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)
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  |  
浏览/下载:1658/238
  |  
提交时间:2010/10/29
Mocvd
Gan
Ingan
Cubic
Led
Chemical-vapor-deposition
Molecular-beam Epitaxy
Gallium Nitride
Phase Epitaxy
Ingan Films
Electroluminescence
Zincblende
Wurtzite
Mbe
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Zhao DG
;
Wang YT
;
Sun XL
;
Wu RH
;
Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)
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  |  
浏览/下载:1278/252
  |  
提交时间:2010/11/15
Cubic Gan
Buffer Layer
Atomic Force Microscopy
Reflection High-energy Electron Diffraction
Movpe
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
;
Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)
  |  
收藏
  |  
浏览/下载:1665/311
  |  
提交时间:2010/11/15
Metalorganic Chemical Vapor Deposition
Cubic Gan
Hexagonal Phase Content
4-circle X-ray Double Crystal Diffraction
Molecular-beam Epitaxy
Gallium Nitride
Thin-films
Silicon
Gaas