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Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
2006
Conference NameConference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Source PublicationUltrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Pages6118: Z1180-Z1180
Conference DateJAN 23-25, 2006
Conference PlaceSan Jose, CA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-6160-1
AbstractThe nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.
metadata_83chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordGainnas/gaas Quantum Wells Optical Properties Nonradiative Recombination Effect Time-resolved Photoluminescence Pl Decay Dynamics Pl Thermal Quenching Molecular-beam Epitaxy Gaasn Alloys Excitation
Subject Area半导体物理
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9960
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Sun, Z ,Xu, ZY ,Yang, XD ,et al. Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2006:6118: Z1180-Z1180.
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