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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [12]
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Characteristics of SOI rib waveguide microring and racetrack resonators
会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:
Huang, QZ
;
Xiao, X
;
Li, YT
;
Yu, YD
;
Yu, JZ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(758Kb)
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浏览/下载:1827/297
  |  
提交时间:2010/03/09
Resonators
Submicron Rib Waveguides
Silicon-on-insulator
Electron Beam Lithography
Growth and photoluminescence of InAlGaN films
会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:
Li DB
;
Dong X
;
Huang JS
;
Liu XL
;
Xu ZY
;
Wang ZG
;
Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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  |  
浏览/下载:1472/347
  |  
提交时间:2010/10/29
Multiple-quantum Wells
Quaternary Alloys
Optical-properties
Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
;
Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1516/297
  |  
提交时间:2010/10/29
Ge/si Islands
Quantum Dot
Band Alignment
Pl
Si/si1-xgex Quantum-wells
Stranski-krastanov Growth
Ii Band Alignment
Ge Islands
Temperature-dependence
Photoluminescence
Layers
Luminescence
Organization
Mechanism
Hybrid CMOS/VCSEL optoelectronic modules
会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:
Chen HD
;
Mao LH
;
Tiang J
;
Liang K
;
Du Y
;
Huang YZ
;
Wu RG
;
Feng J
;
Ke XM
;
Liu HY
;
Wang ZG
;
Li SR
;
Li ZY
;
Guo WL
;
Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(212Kb)
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收藏
  |  
浏览/下载:1729/313
  |  
提交时间:2010/10/29
Vcsel
Cmos
Mcm
Optoelectronic Integration
Smart Pixels
Optical Interconnects
Smart
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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浏览/下载:1845/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
  |  
收藏
  |  
浏览/下载:1326/204
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
VCSEL based optoelectronic multiple chip modules
会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Chen HD
;
Liang K
;
Du Y
;
Huang YZ
;
Tiang J
;
Ma XY
;
Wu RH
;
Li SY
;
Guo WL
;
Xu GJ
;
Wang Y
;
Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(129Kb)
  |  
收藏
  |  
浏览/下载:1515/289
  |  
提交时间:2010/10/29
Vcsel
Photodetector
Cmos
Mcm
Optoelectronic Integration
Optical Interconnects
Surface-emitting Lasers
Mqw Modulators
Integration
Circuits
Vlsi
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy
会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:
Zhang WC
;
Li Z
;
Siddons DP
;
Huang T
;
Zhao LJ
;
Kakuno EM
;
Pietraski P
;
Li CJ
;
Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)
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  |  
浏览/下载:1576/322
  |  
提交时间:2010/11/15
Experimental study on tunable external cavity photodetectors
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Ren XM
;
Liu K
;
Huang YQ
;
Liu LY
;
Li JX
;
Guo W
;
Liao QW
;
Ma XY
;
Kang XJ
;
Campbell JC
;
Ren XM Beijing Univ Posts & Telecommun Beijing 100876 Peoples R China.
Adobe PDF(94Kb)
  |  
收藏
  |  
浏览/下载:1560/392
  |  
提交时间:2010/11/15
External Cavity Photodetector
Tunable Photodetector
Optoelectronic Device
Wavelength
Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy
会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:
Liu JP
;
Kong MY
;
Huang DD
;
Li JP
;
Sun DZ
;
Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:975/0
  |  
提交时间:2010/10/29
Strain-shift Coefficients
Si1-xgex
Silicon
Phonons