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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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  |  
浏览/下载:1358/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
;
Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)
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浏览/下载:1597/337
  |  
提交时间:2010/03/29
Selective-area Growth
Ultra-low-pressure
Integrated Optoelectronics
Optical Pulse Generation
Ring Laser
A low power consumption thermo-optic variable optical attenuator based on SOI material
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Fang, Q
;
Li, F
;
Wang, CX
;
Xin, HL
;
Liu, YL
;
Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)
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  |  
浏览/下载:1205/240
  |  
提交时间:2010/03/29
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
会议论文
THIN SOLID FILMS, 430 (1-2), DENVER, COLORADO, SEP 10-13, 2002
作者:
Zhang Q
;
Zhu M
;
Wang L
;
Liu E
;
Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(223Kb)
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收藏
  |  
浏览/下载:1332/238
  |  
提交时间:2010/11/15
Amorphous-silicon
Deposition
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:
Lan Q
;
Niu ZC
;
Zhou DY
;
Kong YC
;
Wang XD
;
Miao ZH
;
Feng SL
;
Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(252Kb)
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  |  
浏览/下载:1244/218
  |  
提交时间:2010/11/15
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1402/0
  |  
提交时间:2010/10/29
Molecular Beam Epitaxy
Ingaas Islands
Photolumineseence
Line-width
1.3 Mu-m
Inas/gaas Quantum Dots
Optical-properties
Cap Layer
Gaas
Luminescence
Strain
Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots
会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:
Jiang DS
;
Gong Q
;
Chen YB
;
Sun BQ
;
Liang JB
;
Wang ZG
;
Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(279Kb)
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收藏
  |  
浏览/下载:1343/188
  |  
提交时间:2010/11/15
650nm AlGaInP quantum well lasers for the application of DVD
会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:
Chen LH
;
Ma XY
;
Guo L
;
Ma J
;
Ding HY
;
Cao Q
;
Wang LM
;
Zhang GZ
;
Yang YL
;
Wang GH
;
Tan MQ
;
Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(233Kb)
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收藏
  |  
浏览/下载:1494/409
  |  
提交时间:2010/10/29
Dvd
Laser Diode
Visible
Algainp
Mocvd
Operation
Diodes
Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon
会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:
Yue GZ
;
Chen LF
;
Wang Q
;
Iwaniczko E
;
Kong GL
;
Baugh J
;
Wu Y
;
Han DX
;
Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1150/0
  |  
提交时间:2010/10/29
Vibrational-spectra
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Peng CS
;
Chen H
;
Zhao ZY
;
Li JH
;
Dai DY
;
Huang Q
;
Zhou JM
;
Zhang YH
;
Tung CH
;
Sheng TT
;
Wang J
;
Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)
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收藏
  |  
浏览/下载:1618/311
  |  
提交时间:2010/11/15
Threading Dislocation
Si(100)
Layers
Films