Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
	Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL; Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS10)
会议录名称	PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2
页码	165-167
会议日期	MAY 27-31, 2001
会议地点	KANAZAWA, JAPAN
出版地	DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN
出版者	INST PURE APPLIED PHYSICS
ISBN	4-900526-14-2
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	1.3 mum wavelength In(Ga)As/GaAs nanometer scale islands grown by molecular beam epitaxy (MBE) were characterized by photoluminescence (PL) and atomic force microscopy (AFM) measurements. It is shown that inhomogeneous broadening of optical emission due to fluctuation of the In0.5Ga0.5As islands both in size and in compositions can be effectively suppressed by introducing a AlAs layer and a strain reduction In0.2Ga0.8As layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20meV at room temperature was obtained.
关键词	Molecular Beam Epitaxy Ingaas Islands Photolumineseence Line-width 1.3 Mu-m Inas/gaas Quantum Dots Optical-properties Cap Layer Gaas Luminescence Strain
学科领域	半导体物理
主办者	Kanazawa City.; Minist Educ, Culture, Sports, Sci & Technol.; Japan Soc Promot Sci.; Izumi Sci & Technol Fdn.; Inoue Fdn Sci.; Ishikawa Prefecture.; Japan Adv Inst Sci & Technol.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13703
专题	中国科学院半导体研究所（2009年前）
通讯作者	Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Niu ZC,Wang XD,Miao ZH,et al. Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN:INST PURE APPLIED PHYSICS,2001:165-167.