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波导光栅外腔半导体激光器的耦合效率及线宽研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  张杨杰
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GaN基LED结构设计和理论模拟及载流子局域化实验研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  杨玉珏
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Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 116, 期号: 4, 页码: 1757-1760
Authors:  Yang, YJ;  Zeng, YP
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Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 卷号: 211, 期号: 7, 页码: 1640-1644
Authors:  Yang, YJ;  Zeng, YP
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The role played by strain on phase separation in InGaN quantum wells 期刊论文
SOLID STATE COMMUNICATIONS, 2014, 卷号: 194, 页码: 25-29
Authors:  Yang, YJ;  Ma, P;  Wei, XC;  Zeng, YP
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Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes 期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 326, 页码: 121-125
Authors:  Yang, YJ;  Zeng, YP
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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 143101
Authors:  Fu, MQ;  Pan, D;  Yang, YJ;  Shi, TW;  Zhang, ZY;  Zhao, JH;  Xu, HQ;  Chen, Q
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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233102
Authors:  Yang, YJ;  Wang, JX;  Li, JM;  Zeng, YP
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The thermal stability study and improvement of 4H-SiC ohmic contact 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:  Liu, SB;  He, Z;  Zheng, L;  Liu, B;  Zhang, F;  Dong, L;  Tian, LX;  Shen, ZW;  Wang, JZ;  Huang, YJ;  Fan, ZC;  Liu, XF;  Yan, GG;  Zhao, WS;  Wang, L;  Sun, GS;  Yang, FH;  Zeng, YP
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Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
APPLIED OPTICS, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Authors:  Zhang YJ;  Chang BK;  Yang Z;  Niu J;  Xiong YJ;  Shi F;  Guo H;  Zeng YP;  Chang BK Nanjing Univ Sci & Technol Inst Elect Engn & Optoelect Nanjing 210094 Peoples R China. E-mail Address: bkchang@mail.njust.edu.cn
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