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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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波导光栅外腔半导体激光器的耦合效率及线宽研究
学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:
张杨杰
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View/Download:48/9
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Submit date:2020/08/31
GaN基LED结构设计和理论模拟及载流子局域化实验研究
学位论文
, 北京: 中国科学院研究生院, 2015
Authors:
杨玉珏
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View/Download:623/52
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Submit date:2015/06/02
Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 116, 期号: 4, 页码: 1757-1760
Authors:
Yang, YJ
;
Zeng, YP
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View/Download:384/79
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Submit date:2015/04/02
Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 卷号: 211, 期号: 7, 页码: 1640-1644
Authors:
Yang, YJ
;
Zeng, YP
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View/Download:416/96
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Submit date:2015/03/25
The role played by strain on phase separation in InGaN quantum wells
期刊论文
SOLID STATE COMMUNICATIONS, 2014, 卷号: 194, 页码: 25-29
Authors:
Yang, YJ
;
Ma, P
;
Wei, XC
;
Zeng, YP
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View/Download:516/116
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Submit date:2015/03/25
Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes
期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 326, 页码: 121-125
Authors:
Yang, YJ
;
Zeng, YP
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View/Download:318/48
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Submit date:2015/03/25
Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm
期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 143101
Authors:
Fu, MQ
;
Pan, D
;
Yang, YJ
;
Shi, TW
;
Zhang, ZY
;
Zhao, JH
;
Xu, HQ
;
Chen, Q
Adobe PDF(591Kb)
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View/Download:626/108
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Submit date:2015/03/20
Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233102
Authors:
Yang, YJ
;
Wang, JX
;
Li, JM
;
Zeng, YP
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View/Download:340/27
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Submit date:2015/04/02
The thermal stability study and improvement of 4H-SiC ohmic contact
期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:
Liu, SB
;
He, Z
;
Zheng, L
;
Liu, B
;
Zhang, F
;
Dong, L
;
Tian, LX
;
Shen, ZW
;
Wang, JZ
;
Huang, YJ
;
Fan, ZC
;
Liu, XF
;
Yan, GG
;
Zhao, WS
;
Wang, L
;
Sun, GS
;
Yang, FH
;
Zeng, YP
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Submit date:2015/03/20
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
期刊论文
APPLIED OPTICS, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Authors:
Zhang YJ
;
Chang BK
;
Yang Z
;
Niu J
;
Xiong YJ
;
Shi F
;
Guo H
;
Zeng YP
;
Chang BK Nanjing Univ Sci & Technol Inst Elect Engn & Optoelect Nanjing 210094 Peoples R China. E-mail Address: bkchang@mail.njust.edu.cn
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View/Download:1269/504
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Submit date:2010/03/08
Gaas Photocathodes
Gallium-arsenide
Alxga1-xas
Diffusion
Surface
Energy