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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 143101
Authors:  Fu, MQ;  Pan, D;  Yang, YJ;  Shi, TW;  Zhang, ZY;  Zhao, JH;  Xu, HQ;  Chen, Q
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分子束处延GaAs(1-x)Sbx/GaAs及界面失配研究 期刊论文
半导体学报, 1994, 卷号: 15, 期号: 10, 页码: 665
Authors:  阎春辉;  郑海群;  范缇文;  孔梅影;  曾一平;  黄运衡;  朱世荣;  孙殿照
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离子注入及退火对GaAs/Si晶体完整性影响的研究 期刊论文
半导体学报, 1990, 卷号: 11, 期号: 11, 页码: 866
Authors:  肖光明;  殷士端;  张敬平;  范缇文;  刘家瑞;  丁爱菊;  周钧铭;  朱沛然
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Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火 期刊论文
半导体学报, 1989, 卷号: 10, 期号: 9, 页码: 659
Authors:  吴春武;  殷士端;  张敬平;  范缇文;  刘家瑞;  朱沛然
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