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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm
Fu, MQ; Pan, D; Yang, YJ; Shi, TW; Zhang, ZY; Zhao, JH; Xu, HQ; Chen, Q
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume105Issue:14Pages:143101
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26110
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Fu, MQ,Pan, D,Yang, YJ,et al. Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm[J]. APPLIED PHYSICS LETTERS,2014,105(14):143101.
APA Fu, MQ.,Pan, D.,Yang, YJ.,Shi, TW.,Zhang, ZY.,...&Chen, Q.(2014).Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm.APPLIED PHYSICS LETTERS,105(14),143101.
MLA Fu, MQ,et al."Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm".APPLIED PHYSICS LETTERS 105.14(2014):143101.
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