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Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE 期刊论文
Optics Communications, 2016, 卷号: 370, 页码: 18-21
Authors:  Feng Gao;  ShuaiLuo;  Hai-MingJi;  Song-TaoLiu;  DanLu;  ChenJi;  TaoYang
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Ultrafast and reversible electrochemical lithiation of InAs nanowires observed by in-situ transmission electron microscopy 期刊论文
Nano Energy, 2016, 卷号: 20, 页码: 194-201
Authors:  Xing Li;  DongdongXiao;  HaoZheng;  XianlongWei;  Xiaoye Wang;  LinGu;  Yong-ShengHu;  TaoYang;  QingChen
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Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates 期刊论文
Journal of Crystal Growth, 2015, 卷号: 426, 页码: 287–292
Authors:  XiaoyeWang;  WennaDu;  XiaoguangYang;  XingwangZhang;  TaoYang
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Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75010
Authors:  Yang XG;  Yang T;  Wang KF;  Ji HM;  Ni HQ;  Niu ZC;  Wang ZG;  Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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High-density  Temperature-dependence  Self-formation  Layers  Well  Mbe  
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.38401
Authors:  Yang XG;  Yang T;  Wang KF;  Gu YX;  Ji HM;  Xu PF;  Ni HQ;  Niu ZC;  Wang XD;  Chen YL;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:  Xu PF;  Yang T;  Ji HM;  Cao YL;  Gu YX;  Wang ZG;  Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Well Lasers  Dependence  Diode  Gain  
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 6, 页码: Article no.64320
Authors:  Gu YX;  Yang T;  Ji HM;  Xu PF;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Photoluminescence  Emission  Inalas  
InAs/In_x Ga_(1-x) Sb二类超晶格红外探测器的吸收波长与电子-空穴波函数交叠的研究 期刊论文
物理学报, 2010, 卷号: 59, 期号: 5, 页码: 3099-3106
Authors:  黄建亮;  卫炀;  马文全;  杨涛;  陈良惠
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Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
Authors:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Density-of-states