Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
	Ji HM; Yang T; Cao YL; Ma WQ; Cao Q; Chen LH; Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2009
会议名称	5th International Conference on Semiconductor Quantum Dots
会议录名称	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
页码	VOL 6,NO 4,6 (4): 948-951
会议日期	MAY 11-16, 2008
会议地点	Gyeongju, SOUTH KOREA
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	[ji, hai-ming; yang, tao; cao, yu-lian; ma, wen-quan; cao, qing; chen, liang-hui] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词	Density-of-states
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8268
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Ji HM,Yang T,Cao YL,et al. Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2009:VOL 6,NO 4,6 (4): 948-951.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
271.pdf（244KB）			限制开放	--	请求全文