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InAs/GaAs量子点及其中间能带太阳能电池的理论研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  谷永先
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Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 8, 页码: 081118
Authors:  Gu YX (Gu, Yong-Xian);  Yang XG (Yang, Xiao-Guang);  Ji HM (Ji, Hai-Ming);  Xu PF (Xu, Peng-Fei);  Yang T (Yang, Tao)
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 45, 页码: 173-176
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao YL (Cao, Yulian);  Ji HM (Ji, Haiming);  Xu PF (Xu, Pengfei);  Gu YX (Gu, Yongxian);  Ma WQ (Ma, Wenquan);  Yang T (Yang, Tao)
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Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300
Authors:  Xu, PF;  Ji, HM;  Xiao, JL;  Gu, YX;  Huang, YZ;  Yang, T
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Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 7, 页码: 77301
Authors:  Wang M;  Gu YX;  Ji HM;  Yang T;  Wang ZG;  Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
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Epitaxy  Movpe  
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.30507
Authors:  Yu X;  Gu YX;  Wang Q;  Wei X;  Chen LH;  Wang, Q, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. wangqing@mail.semi.ac.cn
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Type-ii 'w' Quantum Well  Burt-foreman Hamiltonian  Finite Element Methods  Lasers  Alloys  
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.38401
Authors:  Yang XG;  Yang T;  Wang KF;  Gu YX;  Ji HM;  Xu PF;  Ni HQ;  Niu ZC;  Wang XD;  Chen YL;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:  Xu PF;  Yang T;  Ji HM;  Cao YL;  Gu YX;  Wang ZG;  Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Well Lasers  Dependence  Diode  Gain  
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 6, 页码: Article no.64320
Authors:  Gu YX;  Yang T;  Ji HM;  Xu PF;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Photoluminescence  Emission  Inalas