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二氧化钒薄膜半导体-金属相变中的电学和光学性质研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  杨伟
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二氧化钒薄膜  半导体-金属相变  同步测量  多级反射-透射模型  
Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Cui, Kai;  Shao, Jun
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Guo, Xiaolu;  Ma, Wenquan;  Huang, Jianliang;  Zhang, Yanhua;  Wei, Yang;  Cui, Kai;  Cao, Yulian;  Li, Qiong
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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Authors:  Cui, Kai;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Wei, Yang;  Cao, Yulian;  Guo, Xiaolu;  Li, Qiong
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平面型雪崩光电二极管探测器的研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  杨怀伟
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InAs量子点及InAs/GaSb二类超晶格甚长波红外探测器研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  卫炀
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
Zhang, Yanhua1 ; Ma, Wenquan1 ; Wei, Yang1 ; Cao, Yulian1 ; Huang, Jianliang1 ; Cui, Kai1 ; Guo, Xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:  Zhang, Yanhua;  Ma, Wenquan;  Wei, Yang;  Cao, Yulian;  Huang, Jianliang;  Cui, Kai;  Guo, Xiaolu
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High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control 期刊论文
IEEE Journal of Quantum Electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515
Authors:  Wei, Yang;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Cao, Yulian;  Cui, Kai
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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:  Huang JL (Huang, Jianliang);  Ma WQ (Ma, Wenquan);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cui K (Cui, Kai);  Cao YL (Cao, Yulian);  Guo XL (Guo, Xiaolu);  Shao J (Shao, Jun)
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