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Gravitational wave astronomy:the current status 期刊论文
SCIENCE CHINA-Physics, Mechanics & Astronomy, 2015, 卷号: 58, 期号: 12, 页码: 120402
Authors:  BLAIR David;  JULi;  ZHAO ChunNong;  WENLinQing;  CHU Qi;  FANG Qi;  CAI RongGen;  GAO JiangRui;  LIN XueChun;  LIU Dong;  WU Ling-An;  ZHU ZongHong;  REITZE David H.;  ARAI Koji;  ZHANG Fan;  FLAMINI;  Raffaele;  ZHU XingJiang;  HOBBS George;  MANCHESTER Richard N.;  SHANNON Ryan M.;  BACCIGALUPI Carlo;  GAOWei;  XU Peng;  BIAN Xing;  CAO ZhouJian;  CHANG ZiJing;  DONG Peng;  GONG XueFei;  HUANG ShuangLin;  JUPeng;  LUO ZiRen;  QIANG Li’E;  TANG WenLin;  WAN XiaoYun;  WANG Yue;  XU ShengNian;  ZANG YunLong;  ZHANG HaiPeng;  LAU Yun-Kau;  NIWei-Tou
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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 14386
Authors:  X. Rong;  X. Q. Wang;  G. Chen;  X. T. Zheng;  P. Wang;  F. J. Xu;  Z. X. Qin;  N. Tang;  Y. H. Chen;  L. W. Sang;  M. Sumiya;  W. K. Ge;  B. Shen
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Intersubband Transition in GaN/InGaN Multiple Quantum Wells 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 11485
Authors:  G. Chen;  X.Q. Wang;  X. Rong;  P. Wang;  F.J. Xu;  N. Tang;  Z.X. Qin;  Y.H. Chen;  B. Shen
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Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192405 - 192405-4
Authors:  J. X. Duan, N. Tang, J. D. Ye, F. H. Mei, K. L. Teo, Y. H. Chen, W. K. Ge, B. Shen
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
Authors:  G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
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高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 期刊论文
物理学报, 2011, 卷号: 60, 期号: 5, 页码: 056104-1-056104-6
Authors:  唐海马;  郑中山;  张恩霞;  于芳;  李宁;  王宁娟;  李国花;  马红芝
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Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 4, 页码: Art. No. 041907
Authors:  Zhang Q (Zhang Q.);  Wang XQ (Wang X. Q.);  Yin CM (Yin C. M.);  Xu FJ (Xu F. J.);  Tang N (Tang N.);  Shen B (Shen B.);  Chen YH (Chen Y. H.);  Chang K (Chang K.);  Ge WK (Ge W. K.);  Ishitani Y (Ishitani Y.);  Yoshikawa A (Yoshikawa A.)
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Ii-vi Semiconductors  Photoconductivity  Photovoltaic Effects  Semiconductor Epitaxial Layers  Spin-orbit Interactions  Valence Bands  Wide Band Gap Semiconductors  Zinc Compounds  
光伏型InAs量子点红外探测器结构 专利
专利类型: 发明, 专利号: CN200910242347.6, 公开日期: 2011-08-31
Inventors:  唐光华;  徐波;  叶小玲;  金鹏;  刘峰奇;  陈涌海;  王占国;  姜立稳;  孔金霞;  孔宁
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