SEMI OpenIR  > 中科院半导体材料科学重点实验室
Intersubband Transition in GaN/InGaN Multiple Quantum Wells
G. Chen; X.Q. Wang; X. Rong; P. Wang; F.J. Xu; N. Tang; Z.X. Qin; Y.H. Chen; B. Shen
2015
Source PublicationScientific Reports
Volume5Pages:11485
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2016-03-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26647
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
G. Chen,X.Q. Wang,X. Rong,et al. Intersubband Transition in GaN/InGaN Multiple Quantum Wells[J]. Scientific Reports,2015,5:11485.
APA G. Chen.,X.Q. Wang.,X. Rong.,P. Wang.,F.J. Xu.,...&B. Shen.(2015).Intersubband Transition in GaN/InGaN Multiple Quantum Wells.Scientific Reports,5,11485.
MLA G. Chen,et al."Intersubband Transition in GaN/InGaN Multiple Quantum Wells".Scientific Reports 5(2015):11485.
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