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Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 23, 页码: 232104
Authors:  Shang, ZJ;  Zheng, XH;  Yang, C;  Chen, Y;  Li, B;  Sun, L;  Tang, Z;  Zhao, DG
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The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition 期刊论文
VACUUM, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Authors:  Zhu, BL;  Sun, XH;  Zha, XZ;  Su, FH;  Li, GH;  Wu, XG;  Wu, J;  Wu, R;  Liu, J;  Zhu, BL, Wuhan Univ Sci & Technol, Key Lab Hubei Prov Ceram & Refractories, Nanomat Ctr, Wuhan 430081, Peoples R China. 电子邮箱地址: zhubailin97@hotmail.com
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Pld  Zno Films  Substrate Temperature  Crystal Quality  Grain Size  Optical Properties  
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 80, 期号: 1, 页码: 141-144
Authors:  Chen DJ;  Shen B;  Bi ZX;  Zhang KX;  Gu SL;  Zhang R;  Shi, Y;  Zheng YD;  Sun XH;  Wan SK;  Wang ZG;  Shen, B, Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China. 电子邮箱地址: bshen@netra.nju.edu.cn
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Molecular-beam Epitaxy  
GaAs基GaAsSb/GaInAs双层量子阱的发光 期刊论文
发光学报, 2005, 卷号: 26, 期号: 4, 页码: 507-512
Authors:  屈玉华;  江德生;  边历峰;  孙征;  牛智川;  徐晓华
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Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
Authors:  Han XX;  Li DB;  Yuan HR;  Sun XH;  Liu XL;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Field-effect Transistors  
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Authors:  Qu BZ;  Zhu QS;  Sun XH;  Wan SK;  Wang ZG;  Nagai H;  Kawaguchi Y;  Hiramatsu K;  Sawaki N;  Qu BZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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P-type Gan  Light-emitting-diodes  Localized Excitons  Gallium Nitride  Films  Defects  Luminescence  Compensation  Spectroscopy  Acceptors  
GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56
Authors:  Chen DJ;  Shen B;  Bi ZX;  Zhang KX;  Gu SL;  Zhang R;  Shi Y;  Zheng YD;  Sun XH;  Wan SK;  Wang ZG;  Shen B,Nanjing Univ,Natl Lab Solid State Microstruct,Nanjing 210093,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Gan-rich Side  Radical Cell  Iii-v  
Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 6, 页码: 942-943
Authors:  Ma DW;  Ye ZZ;  Huang JY;  Zhao BH;  Wan SK;  Sun XH;  Wang ZG;  Ma DW,Zhejiang Univ,State Key Lab Silicon Mat,Hangzhou 310027,Peoples R China.
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Phase Epitaxial-growth  Photoluminescent Properties  Spray-pyrolysis  Zno  Mgxzn1-xo  
Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 82, 期号: 2, 页码: 206-208
Authors:  Feng ZH;  Yang H;  Zheng XH;  Fu Y;  Sun YP;  Shen XM;  Wang YT;  Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Epitaxial-growth  Films  Gaas