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Green light emitting diode grown on thick strain-reducedGreen light emitting diode grown on thick strain-reduced GaN template 期刊论文
Materials Science in Semiconductor Processing, 2015, 卷号: 29, 页码: 357–361
Authors:  Jiankun Yang;  Tongbo Wei;  Qiang Hu;  Ziqiang Huo;  Baojuan Sun;  Ruifei Duan;  Junxi Wang
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Investigations of wettability of graphene on a micron-scale hole array substrate 期刊论文
RSC Advances, 2015, 卷号: 6, 期号: 3, 页码: 1999-2003
Authors:  Yun Zhao;  Gang Wang;  Wenbin Huang;  Xiaokun Fan;  Ya Deng;  Jian Zhang;  Tongbo Wei;  Ruifei Duan;  Junxi Wang;  Lianfeng Sun
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Generating Electricity Using Graphene Nanodrums 期刊论文
RSC Advances, 2015, 卷号: 5, 期号: 43, 页码: 34065-34069
Authors:  Wenbin Huang;  Yun Zhao;  Guanglong Wang;  Zhongtao Qiao;  Fengqi Gao;  Xiaowei Wang;  Gang Wang;  Ya Deng;  Xiaokun Fan;  Jian Zhang;  Ruifei Duan;  Xiaohui Qiu;  Lianfeng Sun
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Lattice Selective Growth of Graphene on Sapphire Substrate 期刊论文
Journal of Physical Chemistry C, 2015, 卷号: 119, 期号: 1, 页码: 426-430
Authors:  Gang Wang;  Yun Zhao;  Ya Deng;  Wenbin Huang;  Xiaokun Fan;  Jian Zhang;  Ruifei Duan;  Lianfeng Sun
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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang;  Sun, Baojun;  Hu, Qiang;  Wei, Xuecheng;  Duan, Ruifei;  Zhao, Lixia;  Zeng, Yiping;  Li, Jinmin
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Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114006
Authors:  An Tielei;  Sun Bo;  Wei Tongbo;  Zhao Lixia;  Duan Ruifei;  Liao Yuanxun;  Li Jinmin;  Yi Futing
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang;  Zeng, Yiping;  Xu, Shu;  Hu, Q.(huqiang@semi.ac.cn)
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Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors  
金属有机物化学气相沉积装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  段瑞飞;  王军喜;  王国宏;  曾一平;  李晋闽
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