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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:  Li MF(李密锋)
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Inas Quantum Dots  Sacrificed Inas Layer  Molecular Beam Epitaxy  Reflection High-energy Electron  
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng;  Shang, Xiang-jun;  Niu, Zhi-chuan;  Zhu, Y.(
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Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells  
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
SOLID STATE COMMUNICATIONS, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Authors:  Wu H;  Gan HD;  Zheng HZ;  Lu J;  Zhu H;  Ji Y;  Li GR;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.;
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Magnetic Semiconductors  Molecular Beam Epitaxy  Magneto-optical Effects  Transport-properties  Semiconductor  (Ga  Cr)As  
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
JOURNAL OF NANOPARTICLE RESEARCH, 2011, 卷号: 13, 期号: 1, 页码: 185-191
Authors:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China.
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Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy  
Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74313
Authors:  Zhang XW;  Li JB;  Chang K;  Li SS;  Xia JB;  Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Molecular-beam Epitaxy  Room-temperature  Quantum Wires  Semiconductors  Ferromagnetism  Field  Gamnn  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:  Wu CM;  Zhang BP;  Shang JZ;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
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Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mirrors  Gan  Wavelengths  
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.28101
Authors:  Su SJ;  Wang W;  Zhang GZ;  Hu WX;  Bai AQ;  Xue CL;  Zuo YH;  Cheng BW;  Wang QM;  Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
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Gesn  Ge  Molecular Beam Epitaxy  Epitaxial Growth  Semiconductors  Ge(001)2x1