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中国科学院半导体研究所机构知识库
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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:
Li MF(李密锋)
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Submit date:2013/06/03
Inas Quantum Dots
Sacrificed Inas Layer
Molecular Beam Epitaxy
Reflection High-energy Electron
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:
He JF
;
Niu ZC
;
Chang XY
;
Ni HQ
;
Zhu Y
;
Li MF
;
Shang XJ
;
Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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View/Download:1377/319
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Submit date:2011/07/05
Molecular Beam Epitaxy
Anti-phase Domain
Gaas/ge Interface
Chemical Vapor-deposition
Junction Solar-cells
Domain-free Growth
Temperature
Quality
Future
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
;
Xu, Y.(yingqxu@semi.ac.cn)
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View/Download:1246/392
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Submit date:2012/06/14
Alignment
Atomic Force Microscopy
Atomic Spectroscopy
Detectors
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Indium Arsenide
Infrared Detectors
Molecular Beam Epitaxy
Molecular Beams
Optoelectronic Devices
Semiconducting Gallium
Superlattices
Transmission Electron Microscopy
x Ray Diffraction
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
Optoelectronics Letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Authors:
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
;
Shang, Xiang-jun
;
Niu, Zhi-chuan
;
Zhu, Y.(ttcow@126.com)
Adobe PDF(346Kb)
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View/Download:943/361
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Submit date:2012/06/14
Epitaxial Growth
Gallium Arsenide
Growth(Materials)
Molecular Beam Epitaxy
Semiconducting Gallium
Semiconducting Indium
Semiconductor Quantum Wells
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
SOLID STATE COMMUNICATIONS, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Authors:
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
;
Ji Y
;
Li GR
;
Zhao JH
;
Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hdgan@riec.tohoku.ac.jp
;
hzzheng@red.semi.ac.cn
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View/Download:1604/427
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Submit date:2011/07/05
Magnetic Semiconductors
Molecular Beam Epitaxy
Magneto-optical Effects
Transport-properties
Semiconductor
(Ga
Cr)As
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
JOURNAL OF NANOPARTICLE RESEARCH, 2011, 卷号: 13, 期号: 1, 页码: 185-191
Authors:
Wang ZG
;
Wang SJ
;
Zhang CL
;
Li JB
;
Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
Adobe PDF(701Kb)
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Submit date:2011/07/05
Twinned Sic Nanowires
Electronic Properties
Ab Initio
Modeling And Simulation
Silicon-carbide Nanowires
Field-emission Properties
Molecular-beam Epitaxy
Inas Nanowires
Growth
Nanotubes
Nitride
Diffusion
Nanorods
Energy
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74313
Authors:
Zhang XW
;
Li JB
;
Chang K
;
Li SS
;
Xia JB
;
Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn
Adobe PDF(253Kb)
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View/Download:1626/404
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Submit date:2011/07/05
Molecular-beam Epitaxy
Room-temperature
Quantum Wires
Semiconductors
Ferromagnetism
Field
Gamnn
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:
Zhou HY
;
Qu SC
;
Jin P
;
Xu B
;
Ye XL
;
Liu JP
;
Wang ZG
;
Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Submit date:2011/07/05
Atom Force Microscopy
Nanostructures
Molecular-beam Epitaxy
Nanomaterials
Semiconducting Gallium Arsenide
Quantum-dots
Anodic Alumina
Arrays
Placement
Inas
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:
Wu CM
;
Zhang BP
;
Shang JZ
;
Cai LE
;
Zhang JY
;
Yu JZ
;
Wang QM
;
Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
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View/Download:1655/426
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Submit date:2011/07/05
Chemical-vapor-deposition
Molecular-beam Epitaxy
Phase Epitaxy
Mirrors
Gan
Wavelengths
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.28101
Authors:
Su SJ
;
Wang W
;
Zhang GZ
;
Hu WX
;
Bai AQ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
;
Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. cbw@red.semi.ac.cn
Adobe PDF(650Kb)
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View/Download:1338/300
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Submit date:2011/07/05
Gesn
Ge
Molecular Beam Epitaxy
Epitaxial Growth
Semiconductors
Ge(001)2x1