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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
Zhou HY; Qu SC; Jin P; Xu B; Ye XL; Liu JP; Wang ZG; Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume318Issue:1Pages:572-575
metadata_83[zhou, huiying; qu, shengchun; jin, peng; xu, bo; ye, xiaoling; liu, junpeng; wang, zhanguo] chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; [zhou, huiying] cent s univ forestry & technol, comp & informat engn sch, changsha 410004, hunan, peoples r china; [zhou, huiying] hunan normal univ, dept phys, minist educ, key lab low dimens quantum struct & quantum contr, changsha 410081, hunan, peoples r china
KeywordAtom Force Microscopy Nanostructures Molecular-beam Epitaxy Nanomaterials Semiconducting Gallium Arsenide Quantum-dots Anodic Alumina Arrays Placement Inas
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21253
Collection中科院半导体材料科学重点实验室
Corresponding AuthorQu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Recommended Citation
GB/T 7714
Zhou HY,Qu SC,Jin P,et al. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[J]. JOURNAL OF CRYSTAL GROWTH,2011,318(1):572-575.
APA Zhou HY.,Qu SC.,Jin P.,Xu B.,Ye XL.,...&Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac.(2011).Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation.JOURNAL OF CRYSTAL GROWTH,318(1),572-575.
MLA Zhou HY,et al."Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation".JOURNAL OF CRYSTAL GROWTH 318.1(2011):572-575.
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