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低密度InAs/GaAs量子点生长及其单光子源器件工艺研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  李密锋
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单光子源  自组织量子点  低密度  耦合  分子束外延  梯度分布  微区光谱  微柱形微腔  
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:  Li MF(李密锋)
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Inas Quantum Dots  Sacrificed Inas Layer  Molecular Beam Epitaxy  Reflection High-energy Electron  
低密度 InAs/GaAs 量子点生长及其单光子源器件工艺研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  李密锋
Adobe PDF(6832Kb)  |  Favorite  |  View/Download:768/45  |  Submit date:2013/06/20
Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 218
Authors:  Li, Jie;  Guo, Hao;  Liu, Jun;  Tang, Jun;  Ni, Haiqiao;  Shi, Yunbo;  Xue, Chenyang;  Niu, Zhichuan;  Zhang, Wendong;  Li, Mifeng;  Yu, Ying
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
Adobe PDF(6475Kb)  |  Favorite  |  View/Download:1371/319  |  Submit date:2011/07/05
Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 2, 页码: 335-341
Authors:  Shang XJ;  He JF;  Wang HL;  Li MF;  Zhu Y;  Niu ZC;  Fu Y;  Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn;  fyg@theochem.kth.se
Adobe PDF(770Kb)  |  Favorite  |  View/Download:1303/438  |  Submit date:2011/07/05
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