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Self-Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics 期刊论文
ADVANCED MATERIALS, 2014, 卷号: 26, 期号: 17, 页码: 2710-2717
Authors:  Yu, Y;  Dou, XM;  Wei, B;  Zha, GW;  Shang, XJ;  Wang, L;  Su, D;  Xu, JX;  Wang, HY;  Ni, HQ;  Sun, BQ;  Ji, Y;  Han, XD;  Niu, ZC
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嵌入 InAs 量子点的 GaAs 电池的光伏特性研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  尚向军
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嵌入InAs量子点的GaAs电池的光伏特性研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  尚向军
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An effective reflectance method for designing broadband antireflection films coupled with solar cells 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 3, 页码: 37802
Authors:  Zhan, F;  He, JF;  Shang, XJ;  Li, MF;  Ni, HQ;  Xu, YQ;  Niu, ZC
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Observation of Bunched Blinking from Individual CdSe/CdS and CdSe/ZnS Colloidal Quantum Dots 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 卷号: 116, 期号: 23, 页码: 12786-12790
Authors:  Qin, HY;  Shang, XJ;  Ning, ZJ;  Fu, T;  Niu, ZC;  Brismar, H;  Agren, H;  Fu, Y
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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y;  Wang LJ;  Yu Y;  Ni HQ;  Xu YQ;  Niu ZC;  He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
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1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range  
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 2, 页码: 335-341
Authors:  Shang XJ;  He JF;  Wang HL;  Li MF;  Zhu Y;  Niu ZC;  Fu Y;  Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn;  fyg@theochem.kth.se
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Intermediate-band  Transitions  
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113514
Authors:  Shang XJ;  He JF;  Li MF;  Zhan F;  Ni HQ;  Niu ZC;  Pettersson H;  Fu Y;  Fu, Y (reprint author), Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Swedenfyg@theochem.kth.se
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Well Infrared Photodetector  Photocurrent  Efficiency