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2-5m InAs/GaSb superlattices infrared photodetector
Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan; Xu, Y.(yingqxu@semi.ac.cn)
2011
Source PublicationHongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN10072276
Volume40Issue:8Pages:1403-1406
AbstractHigh quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrates by MBE were characterized by different measurement methods, including high resolution transmission electron microscope(HRTEM), atomic force microscope(AFM), X-ray diffraction(XRD), low temperature(LT) and room temperature(RT) photo response spectrum and LT and RT photoluminescence(PL) spectrum. Then2-5μm GaAs and GaSb based infrared photodetectors were fabricated by these InAs/GaSb type-II band alignment superlattices materials. The detectivity of the2μm GaAs based InAs/GaSb SLs photodetector is4×109 cm· Hz1/2/W at77K and that of the5μm GaSb based InAs/GaSb SLs photodetector is1.6×1010 cm· Hz1/2/W at the same temperature.
metadata_83半导体超晶格国家重点实验室
KeywordAlignment Atomic Force Microscopy Atomic Spectroscopy Detectors Epitaxial Growth Gallium Alloys Gallium Arsenide Indium Arsenide Infrared Detectors Molecular Beam Epitaxy Molecular Beams Optoelectronic Devices Semiconducting Gallium Superlattices Transmission Electron Microscopy x Ray Diffraction
Subject Area半导体物理
Indexed ByEI
Language中文
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23051
Collection半导体超晶格国家重点实验室
Corresponding AuthorXu, Y.(yingqxu@semi.ac.cn)
Recommended Citation
GB/T 7714
Xu, Yingqiang,Tang, Bao,Wang, Guowei,et al. 2-5m InAs/GaSb superlattices infrared photodetector[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2011,40(8):1403-1406.
APA Xu, Yingqiang,Tang, Bao,Wang, Guowei,Ren, Zhengwei,Niu, Zhichuan,&Xu, Y..(2011).2-5m InAs/GaSb superlattices infrared photodetector.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,40(8),1403-1406.
MLA Xu, Yingqiang,et al."2-5m InAs/GaSb superlattices infrared photodetector".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 40.8(2011):1403-1406.
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