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Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 8, 页码: 5699-5707
Authors:  Juan Lu;   Zhi-Qiang Fan;   Jian Gong;   Jie-Zhi Chen;   Huhe ManduLa;   Yan-Yang Zhang;   Shen-Yuan Yang Xiang-Wei Jiang
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Phonon-Assisted Photoluminescence Up-Conversion of Silicon- Vacancy Centers in Diamond 期刊论文
The Journal of Physical Chemistry Letters, 2018, 卷号: 9, 期号: 22, 页码: 6656-6661
Authors:  Yuan-Fei Gao;  Qing-Hai Tan;  Xue-Lu Liu;  Shu-Liang Ren;  Yu-Jia Sun;  Da Meng;  Ying-Jie Lu;  Ping-Heng Tan;  Chong-Xin Shan;  Jun Zhang
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 4, 页码: 047102
Authors:  Cao Zhi-Fang;  Lin Zhao-Jun;  Lu Yuan-Jie;  Luan Chong-Biao;  Wang Zhan-Guo
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
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一种在硅衬底上生长无裂纹Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  韩修训;  李杰民;  黎大兵;  陆沅;  王晓晖
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自适应柔性层制备无裂纹硅基Ⅲ族氮化物薄膜的方法 专利
专利类型: 发明, 申请日期: 2005-12-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  黎大兵;  陆沅;  韩修训;  李杰民;  王晓辉;  刘祥林;  王占国
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1.5μm InGaAsP/InP脊型波导分布反馈激光器 期刊论文
半导体学报, 1989, 卷号: 10, 期号: 10, 页码: 794
Authors:  王圩;  张静媛;  田慧良;  谬育博;  汪孝杰;  马朝华;  王丽明;  吕卉;  高俊华;  高洪海
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一种水下传感器链快速布放的方法 专利
专利类型: 发明, 公开日期: 2014-04-30
Inventors:  卢宝莉;  王永杰;  戴兴;  刘元辉;  李芳;  刘育梁
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一种光纤温深潜标连续测量系统 专利
专利类型: 发明, 公开日期: 2014-04-30
Inventors:  卢宝莉;  王永杰;  戴兴;  刘元辉;  李芳;  刘育梁
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一种拖曳式光纤温深剖面连续测量系统 专利
专利类型: 发明, 公开日期: 2014-04-30
Inventors:  王永杰;  卢宝莉;  戴兴;  刘元辉;  李芳;  刘育梁
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