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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 4, 页码: 047102
Authors:  Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 4, 页码: 047102
Authors:  Cao Zhi-Fang;  Lin Zhao-Jun;  Lu Yuan-Jie;  Luan Chong-Biao;  Wang Zhan-Guo
Adobe PDF(343Kb)  |  Favorite  |  View/Download:654/217  |  Submit date:2013/09/17
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 9, 页码: 16741056
Authors:  Lü, Yuan-Jie;  Lin, Zhao-Jun;  Yu, Ying-Xia;  Meng, Ling-Guo;  Cao, Zhi-Fang;  Luan, Chong-Biao;  Wang, Zhan-Guo
Adobe PDF(147Kb)  |  Favorite  |  View/Download:551/175  |  Submit date:2013/05/07