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Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
Authors:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang;  Ping Chen;  Jian Jun Zhu;  Zong Shun Liu;  Jing Yang;  Wei Liu;  Shuang Tao Liu;  Li Qun Zhang;  Mo Li
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2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 2, 页码: 024204
Authors:  Cheng-Ao Yang;  Yu Zhang;  Yong-Ping Liao;  Jun-Liang Xing;  Si-Hang Wei;  Li-Chun Zhang;  Ying-Qiang Xu;  Hai-Qiao Ni;  Zhi-Chuan Niu
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2~4μm 红外波段GaSb基量子阱激光器材料生长与器件制备研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  邢军亮
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High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan
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Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 1, 页码: 013704
Authors:  Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
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一种抑制垂直腔面发射激光器发散角的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-03, 2010-08-12
Inventors:  郑婉华;  刘安金;  邢名欣;  渠宏伟;  陈 微;  周文君;  陈良惠
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光子晶体啁啾波导慢光边发射激光器 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-27, 2010-08-12
Inventors:  郑婉华;  邢名欣;  任 刚;  刘安金;  陈 微;  周文君;  陈良惠
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半导体/磁体/半导体三层结构的制备方法 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨君玲;  陈诺夫;  何家宏;  钟兴儒;  吴金良;  林兰英;  刘志凯;  杨少延;  柴春林
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磁性半导体/半导体异质液相外延生长方法 专利
专利类型: 发明, 申请日期: 2002-05-01, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  杨君玲;  何宏家;  钟兴儒;  吴金良;  林兰英
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用X射线双晶衍射方法测定GaMnAs组分 期刊论文
科学通报, 2001, 卷号: 2035, 期号: 0
Authors:  陈诺夫;  修慧欣;  杨君玲;  吴金良;  钟兴儒;  林兰英
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