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Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  L. Q. Zhang;  H. Yang
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Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 4, 页码: 041211
Authors:  Xiang Li;  Zongshun Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Jing Yang;  Lingcong Le;  Wei Liu;  Xiaoguang He;  Xiaojing Li;  Feng Liang
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Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 012201
Authors:  Feng Liang;  Ping Chen;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu
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Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011204
Authors:  Xiaojing Li;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Jing Yang;  Xiaoguang He;  Liqun Zhang;  Shuming Zhang;  Jianping Liu;  Hui Yang
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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209
Authors:  Lingcong Le;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaojing Li;  Xiaoguang He;  Jianping Liu;  Shuming Zhang;  Hui Yang
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Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching 期刊论文
Journal of Vacuum Science & Technology B, 2015, 卷号: 33, 页码: 032402
Authors:  Chong Geng;  Qingfeng Yan;  Peng Dong;  Liang Shan;  Chengxiao Du;  Tongbo Wei;  Zhibiao Hao
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Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 3, 页码: 031204
Authors:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Le, LC;  Yang, J;  He, XG;  Zhang, SM;  Zhu, JJ;  Wang, H;  Zhang, BS;  Liu, JP;  Yang, H
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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 5, 页码: 051207
Authors:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P;  Liu, ZS;  Le, LC;  Yang, J;  Li, XJ;  Zhang, SM;  Yang, H
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Si delta doping inside InAs/GaAs quantum dots with different doping densities 期刊论文
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2012, 卷号: 30, 期号: 4, 页码: 041808
Authors:  Wang, Ke-Fan;  Gu, Yongxian;  Yang, Xiaoguang;  Yang, Tao;  Wang, Zhanguo
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Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 卷号: 29, 期号: 2, 页码: Article no.21018
Authors:  Li WL;  Jia R;  Chen C;  Li HF;  Liu XY;  Yue HH;  Ding WC;  Ye TC;  Kasai S;  Hashizume T;  Wu NJ;  Xu BS;  Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China.
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