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Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 4, 页码: 041211
Authors:  Xiang Li;  Zongshun Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Jing Yang;  Lingcong Le;  Wei Liu;  Xiaoguang He;  Xiaojing Li;  Feng Liang
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Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011204
Authors:  Xiaojing Li;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Jing Yang;  Xiaoguang He;  Liqun Zhang;  Shuming Zhang;  Jianping Liu;  Hui Yang
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GaN基材料生长与发光器件基础问题研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  乐伶聪
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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209
Authors:  Lingcong Le;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Zongshun Liu;  Jianjun Zhu;  Jing Yang;  Xiaojing Li;  Xiaoguang He;  Jianping Liu;  Shuming Zhang;  Hui Yang
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Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 卷号: 33, 期号: 2, 页码: 021505
Authors:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu;  Zongshun Liu;  Lingcong Le;  Xiaoguang He;  Xiaojing Li
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
一种高阻GaN薄膜的制备方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  何晓光;  赵德刚;  江德生;  刘宗顺;  陈平;  杨静;  乐伶聪;  李晓静;  杨辉
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InGaN太阳能电池及其制作方法 专利
专利类型: 发明, 公开日期: 2012-12-19
Inventors:  李亮;  赵德刚;  江德生;  刘宗顺;  陈平;  吴亮亮;  乐伶聪;  杨辉
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改进p-GaN薄膜欧姆接触的材料结构及其制备方法 专利
专利类型: 发明, 公开日期: 2013-05-01
Inventors:  吴亮亮;  赵德刚;  江德生;  刘宗顺;  陈平;  李亮;  乐伶聪;  杨辉
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高电阻低位错GaN薄膜及制备方法 专利
专利类型: 发明, 公开日期: 2014-06-25
Inventors:  何晓光;  赵德刚;  江德生;  刘宗顺;  陈平;  杨静;  乐伶聪;  李晓静;  杨辉
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