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基于RTD与EHEMT的超高速全并行模数转换器 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  戴 扬;  杜 睿;  杨富华
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InP衬底上集成增强型和耗尽型HEMT的制作方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  戴扬
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基于共振隧穿二极管与高电子迁移率晶体管的高速集成电路工艺与设计 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  戴扬
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A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 3, 页码: 87-91
Authors:  Du Rui;  Dai Yang;  Chen Yanling;  Yang Fuhua
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Design of a Frequency Divider with Reduced Complexity Based on a Resonant Tunneling Diode 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1292-1297
Authors:  Du Rui;  Dai Yang;  Yang Fuhua
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高性能InGaAs/AlAs共振隧穿二极管的研制与器件模拟分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 563-566
Authors:  马龙;  张杨;  戴扬;  杨富华;  曾一平;  王良臣
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A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 3, 页码: 332-336
Authors:  Dai Yang;  Huang Yinglong;  Liu Wei;  Ma Long;  Yang Fuhua;  Wang Liangchen;  Zeng Yiping;  Zheng Houzhi
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